NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V

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NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V

Name: NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V
Brand: trusTec
Price: 1 USD

China NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V wholesale

Brand Name : trusTec

Model Number : DB3

Certification : ROHS

Place of Origin : China

MOQ : 5K PCS

Price : Negotiable (EXW/FOB/CNF)

Payment Terms : T/T

Supply Ability : 800KK PCS per month

Delivery Time : 10 work days fresh products

Packaging Details : 5K PCS per tape & box, 100K PCS per carton.

VBO : 28-36V

VBO Typ : 32V

Package : DO-35 glass

IBO : 100μA

Type : DIAC

Package type : Through Hole

Material : Silicon

Power : 150mW

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Glass Passivated NPN Bidirectional Trigger Diode Thyristors DIAC DB3 Blue Body Coat

DB3

BIDIRECTIONAL TRIGGER DIODE

Breakover Voltage - 32 Volts Power- 150mW

NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V

Product Details

Small glass structure ensures high reliability

VBO:28-36V version

Low breakover current

High temperature soldering guaranteed 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension

MECHANICAL DATA

Case: JEDEC DO-35 glass body / A-405 plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026

Mounting Position: Any

Weight: DO-35 0.005 ounce, 0.14gram

A-405 0.008 ounce, 0.23gram

MAXIMUM RATINGS AND CHARACTERISTICS

	TEST CONDITION	SYMBOLS	VALUE			UNITS
	TEST CONDITION	SYMBOLS	Min.	Typ.	Max.	UNITS
Breakover voltage	C=22nF	VBO	28	32	36	VOLTS
Breakover voltage symmetry	C=22nF	I+VBOI-I-VBOI	-3		3	VOLTS
Dynamic breakover voltage	(NOTE 1)	I D V ± I	5			VOLTS
Output voltage	DIAGRAM2	VO	5			VOLTS
Breakover current	C=22nF	IBO			100	mA
Rise time	DIAGRAM3	tr		1.5		mS
Leakage current	VR=0.5VBO	IB			10	mA
Power dissipation on printed circuit	TA=65 C	Pd			150	mW
Repetitive peak on-state current	tp=20ms f=100Hz	ITRM			2	A
Thermal Resistances from Junction to ambient		RQJA			400	℃/W
Thermal Resistances from Junction to lead		RQJL			150	℃/W
Operating junction and storage temperature range		TJ,TSTG			125	℃

Product Datasheet

Type	Breakover Voltage			Max. Breakover Voltage Symmetry	Max. Peak Breakover Current	Max. Dynamic Breakover Voltage	Max. Peak On-state Current	Package
	V			V	μA	V	A
	Min.	Typ.	Max.	V	μA	V	A
DB3	28	32	36	3	100	5	2	DO-35
DB4	35	40	45	3	100	5	2	DO-35
DB6	56	63	70	3	100	5	2	DO-35
DB́8	72	80	88	3	100	5	2	DO-35

NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V

Product Tags:

bl db3 diode 150mW 32V

db3 diac trigger diode

Glass Passivated Diode 150mW 32V

NPN DB3 Bidirectional Diac Trigger Diode Thyristors Glass Passivated Diode 150mW 32V Images

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